Gamma radiation exposure of MCT diode arrays

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dc.creatorSizov, F. F.
dc.creatorLysiuk, I. O.
dc.creatorGumenjuk-Sichevska, J. V.
dc.creatorBunchuk, S. G.
dc.creatorZabudsky, V. V.
dc.date2006-01-13
dc.date.accessioned2026-07-07T06:57:32Z
dc.date.available2026-07-07T06:57:32Z
dc.descriptionInvestigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.
dc.description11 pages, 4 figures, submitted to Semiconductor Science and Technology
dc.identifierhttps://arxiv.org/abs/cond-mat/0601276
dc.identifierhttp://arxiv.org/abs/cond-mat/0601276
dc.identifierSemicond.Sci.Tehnol. vol.21, No.3, p.358-363 (2006)
dc.identifierdoi:10.1088/0268-1242/21/3/026
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/107001
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleGamma radiation exposure of MCT diode arrays
dc.typetext

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