Electronic Properties of the Semiconductor RuIn$_3$

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dc.creatorBogdanov, D.
dc.creatorWinzer, K.
dc.creatorNekrasov, I. A.
dc.creatorPruschke, T.
dc.date2007-03-21
dc.date.accessioned2026-07-07T08:26:13Z
dc.date.available2026-07-07T08:26:13Z
dc.descriptionTemperature dependent measurements of the resistivity on RuIn$_3$ single crystals show a semiconducting behaviour, in contrast to previously published results. In the high temperature range the semiconducting gap was measured to be $0.4-0.5$eV. We observe an anisotropy of the resistivity along [110] and [001] orientations of the tetragonal single crystals. At low temperatures two activation energies of impurities were estimated to 1meV and 10meV. The temperature dependence of the specific heat and the band structure calculations provide also a semiconducting behaviour of RuIn$_3$.
dc.identifierhttps://arxiv.org/abs/cond-mat/0703563
dc.identifierhttp://arxiv.org/abs/cond-mat/0703563
dc.identifierJ. Phys.: Condens. Matter 19 No 23 (13 June 2007) 232202
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136864
dc.subjectMaterials Science
dc.titleElectronic Properties of the Semiconductor RuIn$_3$
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