Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
| dc.creator | Hwang, E. H. | |
| dc.creator | Sarma, S. Das | |
| dc.date | 2007-11-06 | |
| dc.date | 2008-01-31 | |
| dc.date.accessioned | 2026-07-07T09:37:54Z | |
| dc.date.available | 2026-07-07T09:37:54Z | |
| dc.description | We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $ρ_{ph}(T)$ to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reaching values above $10^5$ cm$^2/Vs$. We comment on the low-temperature Bloch-Grüneisen behavior where $ρ_{ph}(T) \sim T^4$ for unscreened electron-phonon coupling. | |
| dc.description | 6 pages, 5 figures | |
| dc.identifier | https://arxiv.org/abs/0711.0754 | |
| dc.identifier | http://arxiv.org/abs/0711.0754 | |
| dc.identifier | Phys. Rev. B 77, 115449 (2008) | |
| dc.identifier | doi:10.1103/PhysRevB.77.115449 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/160623 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene | |
| dc.type | text |