Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

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dc.creatorBerciaud, Stephane
dc.creatorRyu, Sunmin
dc.creatorBrus, Louis E.
dc.creatorHeinz, Tony F.
dc.date2009-01-06
dc.date.accessioned2026-07-07T12:27:07Z
dc.date.available2026-07-07T12:27:07Z
dc.descriptionThe properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm-1) and increased widths (14 cm-1) compared to the response of graphene monolayers supported on the SiO2 covered substrate. From analysis of the G-mode Raman spectra, we deduce that the free-standing graphene monolayers are essentially undoped, with an upper bound of 2x10^11 cm-2 for the residual carrier concentration. On the supported regions, significantly higher and spatially inhomogeneous doping is observed. The free-standing graphene monolayers show little local disorder, based on the very weak Raman D-mode response. The two-phonon 2D mode of the free-standing graphene monolayers is downshifted in frequency compared to that of the supported region of the samples and exhibits a narrowed, positively skewed line shape.
dc.identifierhttps://arxiv.org/abs/0901.0729
dc.identifierhttp://arxiv.org/abs/0901.0729
dc.identifierdoi:10.1021/nl8031444
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/215100
dc.subjectMaterials Science
dc.titleProbing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
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