A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

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dc.creatorIannacci, J.
dc.creatorTian, J.
dc.creatorGaddi, R.
dc.creatorGnudi, A.
dc.creatorBartek, M.
dc.date2008-02-21
dc.date.accessioned2026-07-07T09:22:21Z
dc.date.available2026-07-07T09:22:21Z
dc.descriptionIn this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 transmission lines and shorts was fabricated and tested.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)
dc.identifierhttps://arxiv.org/abs/0802.3057
dc.identifierhttp://arxiv.org/abs/0802.3057
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155345
dc.subjectOther Computer Science
dc.titleA Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package
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