Electronic and spin properties of hole point contacts
| dc.creator | Zuelicke, U. | |
| dc.date | 2006-08-02 | |
| dc.date.accessioned | 2026-07-07T07:40:11Z | |
| dc.date.available | 2026-07-07T07:40:11Z | |
| dc.description | We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated quasi-onedimensional (quasi-1D) hole subband energies and anisotropic Lande g-factors. Confinement-induced band mixing results in the possibility to manipulate electronic and spin properties of quasi-1D hole states over a much wider range than is typically possible for confined conduction-band electrons. Our results are relevant for recent experiments where source-drain-bias spectroscopy was used to measure Zeeman splitting of holes in p-type quantum point contacts. | |
| dc.description | 4 pages, 3 figures, LaTex Wiley-VCH style (class files included), accepted for publication in proceedings of PASPS-IV | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0608045 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0608045 | |
| dc.identifier | phys. stat. sol. (c) 3, 4354 (2006) | |
| dc.identifier | doi:10.1002/pssc.200672801 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/121705 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Electronic and spin properties of hole point contacts | |
| dc.type | text |