Transport in single-molecule transistors: Kondo physics and negative differential resistance

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dc.creatorYu, L. H.
dc.creatorNatelson, D.
dc.date2004-05-24
dc.date.accessioned2026-07-07T02:58:19Z
dc.date.available2026-07-07T02:58:19Z
dc.descriptionWe report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in ``control'' devices that we ascribe to adsorbed contamination. We discuss the need for a statistical approach to device characterization, and the criteria that must be satisfied to infer that transport is based on single molecules. We describe apparent Kondo physics in C$_{60}$-based single-molecule transistors (SMTs), including signatures of molecular vibrations in the Kondo regime. Finally, we report gate-modulated NDR in devices made without intentional molecular components, and discuss possible origins of this property.
dc.description15 pages, 8 figures. To appear in Oct. 2004 issue of Nanotechnology, proceedings of International Conference on Nanoscale Devices and Systems Integration
dc.identifierhttps://arxiv.org/abs/cond-mat/0405568
dc.identifierhttp://arxiv.org/abs/cond-mat/0405568
dc.identifierNanotechnology 15, S517 (2004)
dc.identifierdoi:10.1088/0957-4484/15/10/004
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24036
dc.subjectMesoscale and Nanoscale Physics
dc.titleTransport in single-molecule transistors: Kondo physics and negative differential resistance
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