Single particle relaxation time versus transport scattering time in a 2D graphene layer
| dc.creator | Hwang, E. H. | |
| dc.creator | Sarma, S. Das | |
| dc.date | 2008-01-30 | |
| dc.date.accessioned | 2026-07-07T09:37:56Z | |
| dc.date.available | 2026-07-07T09:37:56Z | |
| dc.description | We theoretically calculate and compare the single-particle relaxation time ($τ_s$) defining quantum level broadening and the transport scattering time ($τ_t$) defining Drude conductivity in 2D graphene layers in the presence of screened charged impurities scattering and short-range defect scattering. We find that the ratio $τ_t/τ_s$ increases strongly with increasing $k_F z_i$ and $κ$ where $k_F$, $z_i$, and $κ$ are respectively the Fermi wave vector, the separation of the substrate charged impurities from the graphene layer, and the background lattice dielectric constant. A critical quantitative comparison of the $τ_t/τ_s$ results for graphene with the corresponding modulation-doped semiconductor structures is provided, showing significant differences between these two 2D carrier systems. | |
| dc.description | 7 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/0801.4736 | |
| dc.identifier | http://arxiv.org/abs/0801.4736 | |
| dc.identifier | Phys. Rev. B 77, 195412 (2008) | |
| dc.identifier | doi:10.1103/PhysRevB.77.195412 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/160631 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Single particle relaxation time versus transport scattering time in a 2D graphene layer | |
| dc.type | text |