Deformation potential scattering from dislocations in III-V nitride quantum wells

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dc.creatorJena, Debdeep
dc.creatorMishra, Umesh K.
dc.date2001-07-13
dc.date.accessioned2026-07-07T02:42:10Z
dc.date.available2026-07-07T02:42:10Z
dc.descriptionWe present a theory of deformation potential carrier scattering of two-dimensional electron gases from the strain fields surrounding dislocations. The results are applied to study the transport characteristics in III-V nitride two-dimensional electron gases in Al(Ga)N/GaN quantum wells. A hypothetical charged core has been associated as the {\em only} scattering potential for analyzing experimental results for transport studies of the nitrides; we critically examine this assumption in light of our results of strain field scattering. By computing the effect of all possible scattering mechanisms we gauge the importance of strain field scattering from dislocations.
dc.identifierhttps://arxiv.org/abs/cond-mat/0107311
dc.identifierhttp://arxiv.org/abs/cond-mat/0107311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18029
dc.subjectMaterials Science
dc.titleDeformation potential scattering from dislocations in III-V nitride quantum wells
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