Transverse instability at a compensated interface of ferromagnetic antiferromagnetic bilayer

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dc.creatorUsov, N. A.
dc.creatorChang, Ching-Ray
dc.creatorWei, Zung-Hang
dc.date2005-07-26
dc.date.accessioned2026-07-07T03:06:07Z
dc.date.available2026-07-07T03:06:07Z
dc.descriptionThe analytical theory for a ferromagnetic antiferromagnetic bilayer with a compensated interface has been developed using an explicit expression for the interfacial interaction energy density. A stability of a solution describing domain walls within ferromagnetic and antiferromagnetic films has been investigated. It is shown that even for high values of surface interaction strength a transverse instability originates within the antiferromagnetic film, because the deviation of the unit antiferromagnetic vector out of the interface plane becomes energetically favorable in large enough external magnetic field. However, it is possible to stabilize the spin distribution near the interface assuming additional in-plane anisotropy within the antiferromagnetic layer. In principle, this opens a way to control exchange bias just avoiding a complicated problem of domain rearrangement within the antiferromagnetic film.
dc.description7 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507613
dc.identifierhttp://arxiv.org/abs/cond-mat/0507613
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26696
dc.subjectMaterials Science
dc.titleTransverse instability at a compensated interface of ferromagnetic antiferromagnetic bilayer
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