DFT modelling of bulk-modulated carbon nanotube field-effect transistors

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dc.creatorLatessa, L.
dc.creatorPecchia, A.
dc.creatorDi Carlo, A.
dc.date2005-12-05
dc.date.accessioned2026-07-07T06:53:08Z
dc.date.available2026-07-07T06:53:08Z
dc.descriptionWe report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the non-equilibrium Green's functions (NEGF) scheme. Our attention has been focused on a new kind of devices, the so called bulk-modulated CNTFETs. Recent experimental realizations \cite{Chen,Lin_condMat} have shown that such devices can exhibit excellent performances, even better than state-of-the-art Schottky barrier (SB)-modulated transistors. Our calculations have been intended to explore, at an atomistic level, the physical mechanisms governing the transport in these new devices. We emphasize the role that one-dimensional screening has on gate- and drain-induced current modulation mechanisms, pointing out, at the same time, the importance of a correct evaluation of the nanotube quantum capacitance. The operative regimes and the performance limits of the device are analysed, pointing out, at the same time, the role played by the quasi-one-dimensional, short channel effects.
dc.description12 pages, 14 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0512086
dc.identifierhttp://arxiv.org/abs/cond-mat/0512086
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105483
dc.subjectMesoscale and Nanoscale Physics
dc.titleDFT modelling of bulk-modulated carbon nanotube field-effect transistors
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