Ab initio description of tunnel junctions

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dc.creatorZahn, Peter
dc.creatorMertig, Ingrid
dc.date2000-11-03
dc.date.accessioned2026-07-07T02:39:14Z
dc.date.available2026-07-07T02:39:14Z
dc.descriptionBased on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is evaluated in the ballistic limit as function of the magnetic configuration. Based on these conductances the tunnel magnetoresistance (TMR) ratio is obtained. We investigate the relation between TMR ratio and spin polarization of the electronic structure at the metal/insulator interface.
dc.description6 pages, 4 figures, subm. to J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/cond-mat/0011062
dc.identifierhttp://arxiv.org/abs/cond-mat/0011062
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16974
dc.subjectMaterials Science
dc.titleAb initio description of tunnel junctions
dc.typetext

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