Highly oriented VO2 thin films prepared by sol-gel deposition method

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dc.creatorChae, Byung-Gyu
dc.creatorKim, Hyun-Tak
dc.creatorYun, Sun-Jin
dc.creatorKim, Bong-Jun
dc.creatorLee, Yong-Wook
dc.creatorYoun, Doo-Hyeb
dc.creatorKang, Kwang-Yong
dc.date2005-10-11
dc.date2005-10-12
dc.date.accessioned2026-07-07T06:44:15Z
dc.date.available2026-07-07T06:44:15Z
dc.descriptionHighly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a relatively wide range of pressures below 100 mTorr and temperatures above 400oC. X-ray diffraction analysis showed that as-deposited films crystallize directly to the VO2 phase without passing through intermediate phases. VO2 films have been found to be with [100]- and [010]-preferred orientations on Al2O3(1012) and Al2O3(1010) substrates, respectively. Both films undergo a metal-insulator transition with an abrupt change in resistance, with different transition behaviors observed for the differently oriented films. For the [010]-oriented VO2 films a larger change in resistance of 1.2x10^4 and a lower transition temperature are found compared to the values obtained for the [100]-oriented films.
dc.description4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510267
dc.identifierhttp://arxiv.org/abs/cond-mat/0510267
dc.identifierElectrochem. and Solid-State Lett. 9, C12 (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102720
dc.subjectMaterials Science
dc.titleHighly oriented VO2 thin films prepared by sol-gel deposition method
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