Photochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation

Simple item page
dc.creatorMessina, F.
dc.creatorCannas, M.
dc.date2007-03-02
dc.date.accessioned2026-07-07T07:49:50Z
dc.date.available2026-07-07T07:49:50Z
dc.descriptionIn situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.
dc.description13 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703061
dc.identifierhttp://arxiv.org/abs/cond-mat/0703061
dc.identifierJ. Phys.: Condens. Matter 18 (2006) 9967
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124967
dc.subjectMaterials Science
dc.subjectDisordered Systems and Neural Networks
dc.titlePhotochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation
dc.typetext

Files

Collections

arXiv