Electric field effect on electron spin splitting in SiGe/Si quantum wells

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dc.creatorNestoklon, M. O.
dc.creatorIvchenko, E. L.
dc.creatorJancu, J. -M.
dc.creatorVoisin, P.
dc.date2007-12-12
dc.date2007-12-21
dc.date.accessioned2026-07-07T10:07:35Z
dc.date.available2026-07-07T10:07:35Z
dc.descriptionEffect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations additional electric-field-induced terms appear in the electron spin-dependent Hamiltonian. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the envelope function approach extended to asymmetrical QWs.
dc.description8 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0712.1955
dc.identifierhttp://arxiv.org/abs/0712.1955
dc.identifierPhys. Rev. B 77, 155328 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.155328
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170686
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectric field effect on electron spin splitting in SiGe/Si quantum wells
dc.typetext

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