Light emitting single electron transistors

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dc.creatorKuo, David M. -T.
dc.creatorChang, Yia-chung
dc.date2006-06-03
dc.date2006-06-22
dc.date.accessioned2026-07-07T07:12:25Z
dc.date.available2026-07-07T07:12:25Z
dc.descriptionThe dynamic properties of light-emitting single-electron transistors (LESETs) made from quantum dots are theoretically studied by using nonequilibrium Green's function method. Holes residing at QD created by small ac signals added in the base electrode of valence band lead to the exciton assisted tunnelling level for the electron tunnelling from emitter to collector, it is therefore such small signals can be amplified. LESETs can be employed as efficient single-photon detectors.
dc.description10 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606082
dc.identifierhttp://arxiv.org/abs/cond-mat/0606082
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112071
dc.subjectMesoscale and Nanoscale Physics
dc.titleLight emitting single electron transistors
dc.typetext

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