Kondo effects in a C_60 single-molecule transistor

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dc.creatorRoch, N.
dc.creatorWinkelmann, C. B.
dc.creatorFlorens, S.
dc.creatorBouchiat, V.
dc.creatorWernsdorfer, W.
dc.creatorBalestro, F.
dc.date2008-09-16
dc.date.accessioned2026-07-07T10:03:16Z
dc.date.available2026-07-07T10:03:16Z
dc.descriptionWe have used the electromigration technique to fabricate a $\rm{C_{60}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0809.2700
dc.identifierhttp://arxiv.org/abs/0809.2700
dc.identifierphys. stat. sol. (b) 245, no. 10, 1994-1997 (2008)
dc.identifierdoi:10.1002/pssb.200879621
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/169224
dc.subjectMesoscale and Nanoscale Physics
dc.titleKondo effects in a C_60 single-molecule transistor
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