Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

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dc.creatorUeno, K.
dc.creatorInoue, I. H.
dc.creatorAkoh, H.
dc.creatorKawasaki, M.
dc.creatorTokura, Y.
dc.creatorTakagi, H.
dc.date2003-06-17
dc.date.accessioned2026-07-07T02:51:52Z
dc.date.available2026-07-07T02:51:52Z
dc.descriptionA field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.
dc.identifierhttps://arxiv.org/abs/cond-mat/0306436
dc.identifierhttp://arxiv.org/abs/cond-mat/0306436
dc.identifierAppl.Phys.Lett. 83(2003), 1755
dc.identifierdoi:10.1063/1.1605806
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21628
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleField-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
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