Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon

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dc.creatorFine, B. V.
dc.creatorBakker, J. P. R.
dc.creatorDijkhuis, J. I.
dc.date2007-07-27
dc.date.accessioned2026-07-07T08:20:46Z
dc.date.available2026-07-07T08:20:46Z
dc.descriptionWe describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.
dc.description14 pages, 3 figures, final version
dc.identifierhttps://arxiv.org/abs/0707.4156
dc.identifierhttp://arxiv.org/abs/0707.4156
dc.identifierFluctuations and Noise Letters, v. 5, pp. L443-L456 (2005)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135163
dc.subjectStatistical Mechanics
dc.subjectDisordered Systems and Neural Networks
dc.subjectMaterials Science
dc.titleLong-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon
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