Electronic cooling of a submicron-sized metallic beam

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dc.creatorMuhonen, J. T.
dc.creatorNiskanen, A. O.
dc.creatorMeschke, M.
dc.creatorPashkin, Yu. A.
dc.creatorTsai, J. S.
dc.creatorSainiemi, L.
dc.creatorFranssila, S.
dc.creatorPekola, J. P.
dc.date2008-07-02
dc.date2008-09-26
dc.date.accessioned2026-07-07T12:46:02Z
dc.date.available2026-07-07T12:46:02Z
dc.descriptionWe demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with e.g. conventional e-beam lithography, shadow-angle metal deposition and oxide tunnel junctions. The devices function well and exhibit clear cooling; up to factor of two at sub-kelvin temperatures.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0807.0283
dc.identifierhttp://arxiv.org/abs/0807.0283
dc.identifierAppl. Phys. Lett. 94, 073101 (2009).
dc.identifierdoi:10.1063/1.3080668
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/221248
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectronic cooling of a submicron-sized metallic beam
dc.typetext

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