Multiband tight-binding model of local magnetism in GaMnAs

dc.creatorTang, Jian-Ming
dc.creatorFlatte', Michael E.
dc.date2003-05-06
dc.date2004-01-27
dc.date.accessioned2026-07-07T02:51:12Z
dc.date.available2026-07-07T02:51:12Z
dc.descriptionWe present the spin and orbitally resolved local density of states (LDOS) for a single Mn impurity and for two nearby Mn impurities in GaAs. The GaAs host is described by a sp^3 tight-binding Hamiltonian, and the Mn impurity is described by a local p-d hybridization and on-site potential. Local spin-polarized resonances within the valence bands significantly enhance the LDOS near the band edge. For two nearby parallel Mn moments the acceptor states hybridize and split in energy. Thus scanning tunneling spectroscopy can directly measure the Mn-Mn interaction as a function of distance.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0305118
dc.identifierhttp://arxiv.org/abs/cond-mat/0305118
dc.identifierPhys. Rev. Lett. 92, 047201 (2004)
dc.identifierdoi:10.1103/PhysRevLett.92.047201
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21365
dc.subjectMaterials Science
dc.titleMultiband tight-binding model of local magnetism in GaMnAs
dc.typetext

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