Electronic structure and transport in CsBi$_4$Te$_6$
| dc.creator | Lykke, Lars | |
| dc.creator | Iversen, Bo B. | |
| dc.creator | Madsen, Georg K. H. | |
| dc.date | 2006-04-12 | |
| dc.date.accessioned | 2026-07-07T07:05:27Z | |
| dc.date.available | 2026-07-07T07:05:27Z | |
| dc.description | The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a band gap of 0.08 eV must be enforced. A gap in reasonable agreement with experiment was obtained using the generalized gradient functional of Engel and Vosko. We found that the experimental $p$-type sample has a carrier concentration close to optimal. Furthermore the conduction bands have a form equally well suited for thermoelectric properties and we predict that an optimally doped $n$-type compound could have thermoelectric properties exceeding those of the $p$-type. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0604303 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0604303 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/109673 | |
| dc.subject | Materials Science | |
| dc.title | Electronic structure and transport in CsBi$_4$Te$_6$ | |
| dc.type | text |