Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

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dc.creatorMeyertholen, A. D.
dc.creatorLi, Z. Q.
dc.creatorBasov, D. N.
dc.creatorFogler, M. M.
dc.creatorMartin, M. C.
dc.creatorWang, G. M.
dc.creatorDhoot, A. S.
dc.creatorMoses, D.
dc.creatorHeeger, A. J.
dc.date2007-03-19
dc.date.accessioned2026-07-07T08:05:49Z
dc.date.available2026-07-07T08:05:49Z
dc.descriptionWe show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.
dc.description3+ pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703497
dc.identifierhttp://arxiv.org/abs/cond-mat/0703497
dc.identifierAppl. Phys. Lett. 90, 222108 (2007)
dc.identifierdoi:10.1063/1.2745223
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130398
dc.subjectMaterials Science
dc.titleConcentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
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