Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

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dc.creatorZhou, Bin
dc.creatorLiu, Chao-Xing
dc.creatorShen, Shun-Qing
dc.date2007-05-25
dc.date.accessioned2026-07-07T08:22:43Z
dc.date.available2026-07-07T08:22:43Z
dc.descriptionWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of thickness of the quantum well may cause a transition of Berry phase in two-dimensional hole gas. Correspondingly, the jump of spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.
dc.identifierhttps://arxiv.org/abs/0705.3728
dc.identifierhttp://arxiv.org/abs/0705.3728
dc.identifierEurophys. Lett. 79,47010 (2007)
dc.identifierdoi:10.1209/0295-5075/79/47010
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135746
dc.subjectMesoscale and Nanoscale Physics
dc.titleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
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