Comment on "Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors"

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dc.creatorTimm, C.
dc.creatorSchäfer, F.
dc.creatorvon Oppen, F.
dc.date2001-11-27
dc.date.accessioned2026-07-07T02:43:41Z
dc.date.available2026-07-07T02:43:41Z
dc.descriptionIn a recent Letter, Berciu and Bhatt have presented a mean-field theory of ferromagnetism in III-V semiconductors doped with manganese, starting from an impurity band model. We show that this approach gives an unphysically broad impurity band and is thus not appropriate for (Ga,Mn)As containing 1-5% Mn. We also point out a microscopically unmotivated sign change in the overlap integrals in the Letter. Without this sign change, stable ferromagnetism is not obtained.
dc.description2 pages RevTeX, including 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0111504
dc.identifierhttp://arxiv.org/abs/cond-mat/0111504
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18591
dc.subjectDisordered Systems and Neural Networks
dc.subjectMaterials Science
dc.titleComment on "Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors"
dc.typetext

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