Short time die attach characterisation of semiconductor devices

dc.creatorSzabo, P.
dc.creatorRencz, M.
dc.date2008-01-07
dc.date.accessioned2026-07-07T08:52:59Z
dc.date.available2026-07-07T08:52:59Z
dc.descriptionThermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0801.1007
dc.identifierhttp://arxiv.org/abs/0801.1007
dc.identifierDans 13th International Worshop on THERMal INvestigations of ICs and Systems - THERMINIC 2007, Budapest : Hongrie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145465
dc.subjectGeneral Physics
dc.titleShort time die attach characterisation of semiconductor devices
dc.typetext

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