Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

Simple item page
dc.creatorBelitsky, V. I.
dc.creatorCantarero, A.
dc.creatorPavlov, S. T.
dc.date1996-03-20
dc.date.accessioned2026-07-07T03:08:26Z
dc.date.available2026-07-07T03:08:26Z
dc.descriptionA strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results are valid for absorption by the electronic states of large Landau quantum number where the Coulomb interaction should play a minor role. The resonance shape is in a good qualitattive agreement with experimental observations.
dc.identifierhttps://arxiv.org/abs/cond-mat/9603133
dc.identifierhttp://arxiv.org/abs/cond-mat/9603133
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27496
dc.subjectCondensed Matter
dc.titleMagnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors
dc.typetext

Files

Collections

arXiv