Electrical detection of spin echoes for phosphorus donors in silicon

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dc.creatorHuebl, Hans
dc.creatorHoehne, Felix
dc.creatorGrolik, Benno
dc.creatorStegner, Andre R.
dc.creatorStutzmann, Martin
dc.creatorBrandt, Martin S.
dc.date2007-12-02
dc.date.accessioned2026-07-07T09:36:34Z
dc.date.available2026-07-07T09:36:34Z
dc.descriptionThe electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of $1.7\pm0.2 \rm{μs}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.
dc.description14 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0712.0141
dc.identifierhttp://arxiv.org/abs/0712.0141
dc.identifierPhys. Rev. Lett. 100, 177602 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.177602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160164
dc.subjectQuantum Physics
dc.titleElectrical detection of spin echoes for phosphorus donors in silicon
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