Electron scattering on disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures

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dc.creatorGomez, I.
dc.creatorDiez, E.
dc.creatorDominguez-Adame, F.
dc.creatorOrellana, P.
dc.date2001-12-12
dc.date.accessioned2026-07-07T02:43:49Z
dc.date.available2026-07-07T02:43:49Z
dc.descriptionWe present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describe channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder.
dc.description19 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0112216
dc.identifierhttp://arxiv.org/abs/cond-mat/0112216
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18653
dc.subjectDisordered Systems and Neural Networks
dc.titleElectron scattering on disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures
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