Does $m^*g^*$ diverge at a finite electron density in silicon inversion layers?

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dc.creatorSarachik, M. P.
dc.creatorVitkalov, S. A.
dc.date2002-09-04
dc.date.accessioned2026-07-07T02:47:09Z
dc.date.available2026-07-07T02:47:09Z
dc.descriptionFor the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Landé $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direct determinations of the $g^*m^*$ obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.
dc.description5 pages, 5 figures; conference proceedings: "Quantum Transport and Quantum Coherence" -- Localisation 2002 Sophia University, Tokyo, August 16-19, 2002, to be published in a supplement of the Journal of Physical Society of Japan
dc.identifierhttps://arxiv.org/abs/cond-mat/0209113
dc.identifierhttp://arxiv.org/abs/cond-mat/0209113
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19899
dc.subjectStrongly Correlated Electrons
dc.titleDoes $m^*g^*$ diverge at a finite electron density in silicon inversion layers?
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