The Kondo effect of surface excitons

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dc.creatorAltukhov, P. D.
dc.date2008-01-20
dc.date.accessioned2026-07-07T08:55:33Z
dc.date.available2026-07-07T08:55:33Z
dc.descriptionA recombination radiation line of real excitons in dense two-dimensional electron gas at the [100] silicon surface is observed in luminescence spectra of metal-oxide-semiconductor (MOS) structures. A new effect of anisotropic paramagnetic reduction of the luminescence line indicates a strong influence of the Kondo correlations on electron paramagnetism of the excitons.
dc.description12 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0801.3055
dc.identifierhttp://arxiv.org/abs/0801.3055
dc.identifierJournal of Superconductivity: Incorporating Novel Magnetism, vol. 16, #2, p.p. 267 - 270, 2003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146306
dc.subjectStrongly Correlated Electrons
dc.titleThe Kondo effect of surface excitons
dc.typetext

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