Defect Formation and Crossover Behavior in the Dynamic Scaling Properties of Molecular Beam Epitaxy

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dc.creatorDasSarma, S.
dc.creatorLanczycki, C. J.
dc.creatorGhaisas, S. V.
dc.creatorKim, J. M.
dc.date1994-01-20
dc.date.accessioned2026-07-07T03:07:04Z
dc.date.available2026-07-07T03:07:04Z
dc.descriptionStochastic simulation results, appropriate for Molecular Beam Epitaxy, involving ballistic deposition and thermally activated Arrhenius diffusion of adatoms are presented for one- and two-dimensional substrates, allowing for overhangs and bulk vacancies. The asymptotic Kardar-Parisi- Zhang universality is found to be triggered by a sudden nucleation of large-scale defect formation in the growing film that shows a distinct dependence on dimensionality. The pre-nucleation transient behavior, which may be of experimental relevance due to the low defect content, is associated with standard solid-on-solid universality classes.
dc.description20 pages (+4 figures - not included), Latex 2.95, PP-1133
dc.identifierhttps://arxiv.org/abs/cond-mat/9401043
dc.identifierhttp://arxiv.org/abs/cond-mat/9401043
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27041
dc.subjectCondensed Matter
dc.titleDefect Formation and Crossover Behavior in the Dynamic Scaling Properties of Molecular Beam Epitaxy
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