The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach

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dc.creatorHuth, M.
dc.creatorAnders, F. B.
dc.date1997-05-01
dc.date.accessioned2026-07-07T09:11:42Z
dc.date.available2026-07-07T09:11:42Z
dc.descriptionThe electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects. Within the scope of this calculation using the linearized Boltzmann theory in the relaxation time approximation the qualitative features of the temperature-dependent resistivity, the magnetoresistivity and the thermoelectric power can be successfully reproduced; this is exemplified by a comparison with experimental results on CeCu_2Si_2.
dc.description20 pages, RevTeX, 8 eps figures included, submitted to Phys.Rev.B
dc.identifierhttps://arxiv.org/abs/cond-mat/9705013
dc.identifierhttp://arxiv.org/abs/cond-mat/9705013
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151771
dc.subjectStrongly Correlated Electrons
dc.titleThe influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach
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