Strongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas

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dc.creatorGao, X. P. A.
dc.creatorBoebinger, G. S.
dc.creatorMills Jr., A. P.
dc.creatorRamirez, A. P.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.date2005-01-27
dc.date.accessioned2026-07-07T03:03:29Z
dc.date.available2026-07-07T03:03:29Z
dc.descriptionWe have studied the temperature dependent phonon emission rate $P$($T$) of a strongly interacting ($r_s\geq$22) dilute 2D GaAs hole system using a standard carrier heating technique. In the still poorly understood metallic state, we observe that $P$($T$) changes from $P$($T$)$\sim T^5$ to $P$($T$)$\sim T^7$ above 100mK, indicating a crossover from screened piezoelectric(PZ) coupling to screened deformation potential(DP) coupling for hole-phonon scattering. Quantitative comparison with theory shows that the long range PZ coupling between holes and phonons has the expected magnitude; however, in the metallic state, the short range DP coupling between holes and phonons is {\it almost twenty times stronger} than expected from theory. The density dependence of $P$($T$) shows that it is {\it easier} to cool low density 2D holes in GaAs than higher density 2D hole systems.
dc.descriptionTo appear in Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0501686
dc.identifierhttp://arxiv.org/abs/cond-mat/0501686
dc.identifierPhys. Rev. Lett. 94, 086402 (2005)
dc.identifierdoi:10.1103/PhysRevLett.94.086402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25766
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleStrongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas
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