Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

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dc.creatorGomar-Nadal, Elba
dc.creatorConrad, Brad R.
dc.creatorCullen, William G.
dc.creatorWillams, Ellen D.
dc.date2008-10-02
dc.date.accessioned2026-07-07T10:07:06Z
dc.date.available2026-07-07T10:07:06Z
dc.descriptionPentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added impurity content. The results reveal a factor four decrease in mobility without significant changes in film morphology for source PnQ number fractions below ~0.008. For these low concentrations, the impurity thus directly influences transport, either as homogeneously distributed defects or by concentration at the otherwise-unchanged grain boundaries. For larger impurity concentrations, the continuing strong decrease in mobility is correlated with decreasing grain size, indicating an impurity-induced increase in the nucleation of grains during early stages of film growth.
dc.description18 pages, 4 Figures, 1 Table
dc.identifierhttps://arxiv.org/abs/0810.0428
dc.identifierhttp://arxiv.org/abs/0810.0428
dc.identifierJ. Phys. Chem. C, 112 (14), 5646 -5650, 2008
dc.identifierdoi:10.1021/jp711622z
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170519
dc.subjectMaterials Science
dc.titleEffect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
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