High-Frequency Hopping conductivity of Disordered 2D-system in the IQHE Regime
| dc.creator | Drichko, I. L. | |
| dc.creator | Diakonov, A. M. | |
| dc.creator | Kagan, V. D. | |
| dc.creator | Smirnov, I. Yu. | |
| dc.creator | Toropov, A. I. | |
| dc.date | 1999-04-03 | |
| dc.date | 1999-04-06 | |
| dc.date.accessioned | 2026-07-07T03:13:11Z | |
| dc.date.available | 2026-07-07T03:13:11Z | |
| dc.description | High frequency (hf) conductivity in the form $σ^{hf} = σ_1^{hf} - iσ_2^{hf}$ was obtained from the measurement of Surface Acoustic Waves (SAW) attenuation and velocity (f=30 MHz) in GaAs/AlGaAs heterostructures ($n=1.3-7\cdot 10^{11}cm^{-2}$). It has been shown that in the Integer Quantum Hall Effect (IQHE) regime for all the samples at magnetic fields corresponding to the middle of the Hall plateaus and T=1.5 K, $σ_1 / σ_2 =0.14 \pm 0.03$. The ratio $σ_1 / σ_2=0.15$ points the case when the high-frequency hopping conductivity mechanism (electronic transition between the localized states formed by "tight" pairs) is valid \cite{1}. Dependencies of $σ_1$ and $σ_2$ on temperature and magnetic field is analyzed width of the Landau band broadened by the impurity random potential is determined. | |
| dc.description | RevTeX 2 pages, 3 eps-figures; some corrections in cites | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9904053 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9904053 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/29198 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | High-Frequency Hopping conductivity of Disordered 2D-system in the IQHE Regime | |
| dc.type | text |