1-D Simulation of the Electron Density Distribution in a Novel Nonvolatile Resistive Random Access Memory Device
| dc.creator | Meyer, Rene | |
| dc.creator | Kohlstedt, Hermann | |
| dc.date | 2003-12-23 | |
| dc.date.accessioned | 2026-07-07T02:55:35Z | |
| dc.date.available | 2026-07-07T02:55:35Z | |
| dc.description | The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's equation and the transport equation for electrons assuming a Drift-Diffusion transport mechanism. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found giving rise to a hysteretic I-V characteristic. The R_high to R_low ratio ranging from > 50% to several orders of magnitude is calculated as a function of the dopant content. | |
| dc.description | 4 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0312609 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0312609 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/22989 | |
| dc.subject | Materials Science | |
| dc.title | 1-D Simulation of the Electron Density Distribution in a Novel Nonvolatile Resistive Random Access Memory Device | |
| dc.type | text |