Zeno Quantum Gates in Semiconductor Quantum Dots

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dc.creatorXu, K. J.
dc.creatorHuang, Y. P.
dc.creatorMoore, M. G.
dc.creatorPiermarocchi, C.
dc.date2008-10-24
dc.date.accessioned2026-07-07T10:13:05Z
dc.date.available2026-07-07T10:13:05Z
dc.descriptionWe propose a scheme for a two-qubit conditional phase gate by quantum Zeno effect with semiconductor quantum dots. The system consists of two charged dots and one ancillary dot that can perform Rabi oscillations under a resonant laser pulse. The quantum Zeno effect is induced by phonon-assisted exciton relaxation between the ancillary dot and the charged dots, which is equivalent to a continuous measurement. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.
dc.identifierhttps://arxiv.org/abs/0810.4489
dc.identifierhttp://arxiv.org/abs/0810.4489
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172402
dc.subjectOther Condensed Matter
dc.subjectQuantum Physics
dc.titleZeno Quantum Gates in Semiconductor Quantum Dots
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