Metallic low-temperature resistivity in 2D over an extended temperature range

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dc.creatorKravchenko, S. V.
dc.creatorKlapwijk, T. M.
dc.date1999-09-30
dc.date2000-02-03
dc.date.accessioned2026-07-07T03:14:42Z
dc.date.available2026-07-07T03:14:42Z
dc.descriptionWe report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side, the resistivity near the metal-insulator transition continues to decrease with decreasing temperature and shows no low-temperature up-turn. At the critical electron density, the resistivity is found to be temperature-independent in the entire temperature range 35 mK to 1 K.
dc.descriptionOne reference corrected. To be published in PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/9909458
dc.identifierhttp://arxiv.org/abs/cond-mat/9909458
dc.identifierPhys. Rev. Lett. 84, 2909 (2000)
dc.identifierdoi:10.1103/PhysRevLett.84.2909
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29773
dc.subjectStrongly Correlated Electrons
dc.titleMetallic low-temperature resistivity in 2D over an extended temperature range
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