Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

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dc.creatorSong, G. S.
dc.creatorKobayashi, M.
dc.creatorHwang, J. I.
dc.creatorKataoka, T.
dc.creatorTakizawa, M.
dc.creatorFujimori, A.
dc.creatorOhkouchi, T.
dc.creatorTakeda, Y.
dc.creatorOkane, T.
dc.creatorSaitoh, Y.
dc.creatorYamagami, H.
dc.creatorChang, F. -H.
dc.creatorLee, L.
dc.creatorLin, H. -J.
dc.creatorHuang, D. J.
dc.creatorChen, C. T.
dc.creatorKimura, S.
dc.creatorFunakoshi, M.
dc.creatorHasegawa, S.
dc.creatorAsahi, H.
dc.date2008-05-21
dc.date.accessioned2026-07-07T10:12:54Z
dc.date.available2026-07-07T10:12:54Z
dc.descriptionThe electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0805.3299
dc.identifierhttp://arxiv.org/abs/0805.3299
dc.identifierPhys. Rev. B 78, 033304 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.033304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172342
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleElectronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy
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