Electron Tunneling in Monolayer and Bilayer Graphene

Simple item page
dc.creatorWu, Di
dc.creatorChen, Weiqiang
dc.creatorZhang, Fu-Chun
dc.date2008-08-22
dc.date.accessioned2026-07-07T09:57:55Z
dc.date.available2026-07-07T09:57:55Z
dc.descriptionElectron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It is shown that normal incidence transmission probabilities for monolayer and bilayer graphene exhibit different properties. Our calculation indicates that valleytronics in graphene systems may be detected, generated and controlled by changing the structure parameters of the external electric potential.
dc.description11 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/0808.3032
dc.identifierhttp://arxiv.org/abs/0808.3032
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167524
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron Tunneling in Monolayer and Bilayer Graphene
dc.typetext

Files

Collections

arXiv