Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

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dc.creatorForget, Sebastien
dc.creatorDruon, Frederic
dc.creatorBalembois, Francois
dc.creatorGeorges, Patrick
dc.creatorLandru, Nicolas
dc.creatorFeve, Jean Philippe
dc.creatorLin, Jiali
dc.creatorWeng, Zhiming
dc.date2006-09-29
dc.date.accessioned2026-07-07T07:26:16Z
dc.date.available2026-07-07T07:26:16Z
dc.descriptionthe realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.
dc.identifierhttps://arxiv.org/abs/physics/0609255
dc.identifierhttp://arxiv.org/abs/physics/0609255
dc.identifierOptics Communications 259 (2006) 816-819
dc.identifierdoi:10.1016/j.optcom.2005.09.053
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117013
dc.subjectOptics
dc.titlePassively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser
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