The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs

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dc.creatorEshchenko, D. G.
dc.creatorStorchak, V. G.
dc.creatorCottrell, S. P.
dc.creatorMorenzoni, E.
dc.date2008-10-15
dc.date.accessioned2026-07-07T10:10:24Z
dc.date.available2026-07-07T10:10:24Z
dc.descriptionThe charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($μ^+ + e^-$) center at the tetrahedral As site can capture the track's holes and therefore behaves like a donor.
dc.identifierhttps://arxiv.org/abs/0810.2692
dc.identifierhttp://arxiv.org/abs/0810.2692
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/171591
dc.subjectMaterials Science
dc.titleThe microscopic study of a single hydrogen-like impurity in semi-insulating GaAs
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