Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM
| dc.creator | Grebenyuk, V. M. | |
| dc.creator | Kalinin, A. I. | |
| dc.creator | Shat, Nguyen Manh | |
| dc.creator | Zhanusov, A. K. | |
| dc.creator | Bednyakov, V. A. | |
| dc.date | 2009-03-06 | |
| dc.date.accessioned | 2026-07-07T12:49:51Z | |
| dc.date.available | 2026-07-07T12:49:51Z | |
| dc.description | The discrete modeling of the Geiger-mode APD is considered. Results of modeling and experimental measurements with the SiPM show that the known formula for the charge of the avalanche pulse Q=dU*Cd underestimates its value. In addition, it is seen from the dynamic of the avalanche multiplication that the resistor Rq in photodiode, usually called a quenching resistor, in reality fulfills only the restoring function. The SiPM restoring time, taken into account the number of pixel N and the load resistance R, is T=Cd*(Rq+NR). | |
| dc.description | 9 pages, 5 figures, pdf | |
| dc.identifier | https://arxiv.org/abs/0903.1161 | |
| dc.identifier | http://arxiv.org/abs/0903.1161 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/222511 | |
| dc.subject | Instrumentation and Detectors | |
| dc.title | Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM | |
| dc.type | text |