Usage of Porous Al2O3 Layers for RH Sensing

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dc.creatorTimár-Horváth, Veronika
dc.creatorJuhász, László
dc.creatorVass-Várnai, András
dc.creatorPerlaky, Gergely
dc.date2008-02-21
dc.date.accessioned2026-07-07T09:22:18Z
dc.date.available2026-07-07T09:22:18Z
dc.descriptionAt the Department of Electron Devices a cheap, more or less CMOS process compatible capacitive type RH sensor has been developed. Capacitive sensors are based on dielectric property changes of thin films upon water vapour uptake which depends on the surrounding media's relative humidity content. Because of the immense surface-to-volume ratio and the abundant void fraction, very high sensitivities can be obtained with porous ceramics. One of the ceramics to be used is porous Al2O3, obtained by electrochemical oxidation of aluminium under anodic bias. The average pore sizes are between 6...9 nm. In our paper we intend to demonstrate images representing the influence of the technological parameters on the porous structure and the device sensitivity.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)
dc.identifierhttps://arxiv.org/abs/0802.3041
dc.identifierhttp://arxiv.org/abs/0802.3041
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155329
dc.subjectOther Computer Science
dc.titleUsage of Porous Al2O3 Layers for RH Sensing
dc.typetext

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