Analysis of broadband microwave conductivity and permittivity measurements of semiconducting materials

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dc.creatorRitz, Elvira
dc.creatorDressel, Martin
dc.date2007-12-05
dc.date2008-03-02
dc.date.accessioned2026-07-07T09:37:55Z
dc.date.available2026-07-07T09:37:55Z
dc.descriptionWe perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity, here we present a closed calibration and evaluation procedure for frequencies up to 5 GHz, based on the rigorous solution for the electromagnetic field distribution inside the sample combined with the variational principle; basically no limiting assumptions are necessary. A simple static model based on the electric current distribution proves to yield the same frequency dependence of the complex conductivity up to 1 GHz. After a critical discussion we apply the developed method to the hopping transport in Si:P at temperature down to 1 K.
dc.description9 pages, 10 figures, accepted for publication in the Journal of Applied Physics
dc.identifierhttps://arxiv.org/abs/0712.0741
dc.identifierhttp://arxiv.org/abs/0712.0741
dc.identifierJ. Appl. Phys. 103, 084902 (2008), http://jap.aip.org/
dc.identifierdoi:10.1063/1.2906131
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160627
dc.subjectMaterials Science
dc.subjectDisordered Systems and Neural Networks
dc.titleAnalysis of broadband microwave conductivity and permittivity measurements of semiconducting materials
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