Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon

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dc.creatorSchumacher, J.
dc.creatorMartinez, J. C.
dc.creatorMartin, F.
dc.creatorMaier, M.
dc.creatorAdrian, H.
dc.creatorRaiteri, R.
dc.creatorButt, H. J.
dc.date2000-03-22
dc.date.accessioned2026-07-07T02:37:08Z
dc.date.available2026-07-07T02:37:08Z
dc.descriptionIn this work we investigate the influence of the use of YSZ and CeO2/YSZ as insulators for Metal- Ferroelectric-Insulator-Semiconductor (MFIS) structures made with SrBi2Ta2O9 (SBT). We show that by using YSZ only the a-axis oriented Pyrochlore phase could be obtained. On the other hand the use of a CeO2/YSZ double-buffer layer gave a c-axis oriented SBT with no amorphous SiO2 inter- diffusion layer. The characteristics of MFIS diodes were greatly improved by the use of the double buffer. Using the same deposition conditions the memory window could be increased from 0.3 V to 0.9 V. From the piezoelectric response, nano-meter scale ferroelectric domains could be clearly identified in SBT thin films.
dc.description5 pages, 9 figures, 13 referneces
dc.identifierhttps://arxiv.org/abs/cond-mat/0003356
dc.identifierhttp://arxiv.org/abs/cond-mat/0003356
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16177
dc.subjectMaterials Science
dc.titleAlternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon
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