Sign Changes of Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations

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dc.creatorYao, Y.
dc.creatorFang, Z.
dc.date2005-02-15
dc.date2006-06-15
dc.date.accessioned2026-07-07T06:37:31Z
dc.date.available2026-07-07T06:37:31Z
dc.descriptionFirst-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish the effect from the extrinsic one. The calculated ISHC in n-doped GaAs can be well compared with experiment, and it differs from the sign obtained from the extrinsic effect. On the other hand, the ISHC in W and Au, which shows opposite sign respectively, is robust and not sensitive to the disorder.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0502351
dc.identifierhttp://arxiv.org/abs/cond-mat/0502351
dc.identifierPhys. Rev. Lett. 95, 156601 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.156601
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/100420
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSign Changes of Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations
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