Dynamical mean-field theory of electron-phonon interaction in correlated electron materials: general results and application to doped Mott insulators
| dc.creator | Deppeler, A. | |
| dc.creator | Millis, A. J. | |
| dc.date | 2002-04-29 | |
| dc.date | 2002-05-09 | |
| dc.date.accessioned | 2026-07-07T02:45:15Z | |
| dc.date.available | 2026-07-07T02:45:15Z | |
| dc.description | The dynamical mean-field method is used to formulate a computationally tractable theory of electron-phonon interactions in systems with arbitrary local electron-electron interactions in the physically relevant adiabatic limit of phonon frequency small compared to electron bandwidth or interaction scale. As applications, the phonon contribution to the effective mass of a carrier in a lightly doped Mott insulator is determined and the phase separation boundary is discussed. | |
| dc.description | 4 pages, 4 figures; referencing corrected | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0204617 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0204617 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/19236 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Dynamical mean-field theory of electron-phonon interaction in correlated electron materials: general results and application to doped Mott insulators | |
| dc.type | text |