In-plane optical anisotropy due to conduction band electron wavefunctions

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dc.creatorŁusakowski, J.
dc.creatorSakowicz, M.
dc.creatorFriedland, K. J.
dc.creatorHey, R.
dc.creatorPloog, K.
dc.date2007-03-05
dc.date.accessioned2026-07-07T07:49:59Z
dc.date.available2026-07-07T07:49:59Z
dc.descriptionPhotoluminescence measurements were carried out on Be $δ$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau levels was determined as a function of $B$ and the 2DEG concentration, $n_s$. At $B$ constant, $γ_C$ decreased with the increase of $n_s$. Two mechanisms of the $γ_C(n_s)$ dependence are discussed: a) the Stark effect on a photo excited hole bound to Be acceptor and b) the in-plane anisotropy of the intensity of optical transitions. A quantitative analysis shows that the influence of the Stark effect on $γ_C$ is negligible in the present experiment. We propose that the $γ_C(n_s)$ dependence results from the $C_{2v}$ symmetry of conduction band electron wavefunctions and we give qualitative arguments supporting this interpretation.
dc.identifierhttps://arxiv.org/abs/cond-mat/0703088
dc.identifierhttp://arxiv.org/abs/cond-mat/0703088
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/125025
dc.subjectMesoscale and Nanoscale Physics
dc.titleIn-plane optical anisotropy due to conduction band electron wavefunctions
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